STRUCTURA CRISTALINĂ ŞI PROPRIETĂŢILE OPTICE ALE MATERIALELOR COMPOZITE OBŢINUTE PRIN INTERCALARE CU Cd A MONOCRISTALELOR DE GaSe ŞI GaTe

Elmira VATAVU, Liliana DMITROGLO, Dumitru UNTILĂ, Veaceslav SPRINCEAN, Mihail CARAMAN

Abstract


Formarea prin tratament termic a monocristalelor de GaSe şi GaTe în vapori de Cd a materialului compus din cristalite de GaSe şi CdSe şi, respectiv, de GaTe şi CdTe cu dimensiuni nanometrice a fost confirmată prin analiza diagramelor XRD, imaginilor SEM şi a difuziei combinate Raman. Nanocompozitele GaSe-CdSe şi GaTe-CdTe sunt materiale fotoluminescente (FL) în regiunea oranj-roşu a spectrului. Benzile de FL a compozitelor sunt formate prin suprapunerea benzilor de FL impuritară a cristalitelor componente ale nanocompozitelor GaSe-CdSe şi GaTe-CdTe.

 

STRUCTURAL AND OPTICAL PROPERTIES OF THE COMPOSITE MATERIALS PREPARED BY Cd INTERCALATION IN GaSe AND GaTe SINGLE CRYSTALS

XRD, SEM morphology and diffuse Raman scattering analysis carried out for GaSe and GaTe single crystals intercalated by Cd vapor annealing, has proven the formation of GaSe and CdSe nano-cristallites containing material as well as material based on GaTe and CdTe nanosized cristallites. GaSe-CdSe and GaTe-CdTe nanocomposites exhibit photoluminescent properties in the orange-red spectral range. The photoluminescence spectra of as-prepared nanocomposites consist of a superposition of the impurity radiative bands of the composites’ components.


Keywords


GaSe, GaTe, Cd, composite, XRD, Raman, Photoluminescence

Full Text:

PDF

References


PEARSON, W.B. The crystal structures of semiconductors and a general valence rule. In: Acta Crystallographica, 1964, vol.17, p.1-15.

БЕЛЕНЬКИЙ, Г.Л., САЛАЕВ, Э.Ю., СУЛЕЙМАНОВ, Р.А. Деформационные явления в слоистых крис¬¬та¬л¬лах. B: УФН, 1988, том 155, №5, с.89-127.

McKINNON, W.R., HAERING, R.R. Modern Aspects of Electrochemisty. Vol.15. Ed. R.White, J.Bockris and B.Conway. Editors. New York, Plenum Press: 1983, p.235-304.

GUPTA, V.P., SRIVASTAVA, V.K. Opto-electronic properties of gallium chalcogenides. In: Journal of Physics and Chemistry of Solids, 1981, vol.42, nо.12, p.1071-1077.

YU, G., LIU, Z., XIE, X. et al. Flexible photodetectors with single-crystalline GaTe nanowires. In: Journal of Materials Chemistry C, 2014, vol.2, no.30, p.6104-6110.

HU, P., WEN, Z., WANG, L. et al. Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors. In: ACS Nano. 2012, vol.6, no.7, p.5988-5994.

MANDAL, K.C., MERTIRI, A., PABST, G.W. et al. Layered III-VI chalcogenide semiconductor crystals for radiation detectors. In: Proc. SPIE, 2008, vol.7079, 70790O.

BUCHER, E. Photovoltaic Properties of Solid State Junctions of Layered Semiconductors, In: Photoelectrochemistry and Photovoltaics of Layered Semiconductors. Ed. A.Aruchamy. Kluwer Academic Publishers, 1992, p.1-81. ISBN 978-94-015-1301-2

YU, B.L., ZENG, F., KARTAZAYEV, V. et al. Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal. In: Appl. Phys. Lett., 2005, vol.87, nо.18, p.182104.

ZHOU, W., ZHOU, Y., PENG, Y. et al. Ultrahigh sensitivity and gain white light photodetector based on GaTe/Sn : CdS nanoflake/nanowire heterostructures. In: Nanotechnology, 2014, vol.25, nо.44, p.445202.

Springer Handbook of Electronic and Photonic Materials / Ed. S.Kasap, P.Capper. Springer, 2007. 1407 p. ISBN 978-0-387-29185-7

ROBINSON, P.M., BEVER, M.B. On the thermodynamic properties of the tellurides of cadmium, indium, tin, and lead. In: Trans. Metallurg. Soc. AIME, 1966, vol.236, p.814-817.

GLUSHKO, V.P. Thermal constants of substances. Moscow: VINITI, 1972, vol.VI. ISBN: 978-0-471-31855-2

GUINIER, A. X-Ray diffraction in crystals, imperfect crystals, and amorphous bodies. San-Francisco: W.H. Freeman, 1963. 378 p. ISBN:978-0-486-14134-3

SUSOMA, J., LAHTINEN, J., KIM, M. et al. Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint. In: AIP Advances, 2017, vol.7, no.1, 015014.

HUANG, S., TATSUMI, Y., LING, X. et al. In-Plane Optical Anisotropy of Layered Gallium Telluride. In: ACS Nano, 2016, vol.10, no.9, p.8964-8972.

MEAD, D.G. The far infrared complex reflectivity of GaTe. In: International Journal of Infrared and Millimeter Waves, 1980, vol.1, no.2, p.309-317.

PINE, A.S., DRESSELHAUS, G. Raman scattering in paratellurite, TeO2. In: Phys. Rev. B, 1972, vol.5, no.10, p.4087-4093.

DU, X., LI, Zh., LUAN, C. et al. Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD. In: Journal of Materials Science, 2015, vol.50, no.8, p.3252-3257.

VATAVU, S., ZHAO, H., PADMA, V. et al. Photoluminescence studies of CdTe films and junctions. In: Thin Solid Films, 2007, vol.515, no.15, p.6107-6111.

FONTHAL, G., TIRADO-MEJIA, L., MARIN-HURTADO, J.I. et al. Temperature dependence of the band gap energy of crystalline CdTe. In: J. Phys. Chem. Solids, 2000, vol.61, no.4, p.579-583.

SCHMIDT, T., LISCHKA, K., ZULEHNER, W. Excitation-power dependence of the near-band-edge photoluminescence of semiconductors. In: Phys. Rev. B, 1992, vol.45, no.16, p.8989-8994.

VATAVU, S., ZHAO, H., CARAMAN, Iu. et al. Photoluminesence studies of CdTe/SnO2 and CdTe/CdS heterojunctions: The influence of oxygen and the CdCl2 heat treatment. In: Thin Solid Films, 2011, vol.519, p.7176-7179.

SONG, S.H., WANG, J.F., LALEV, G.M. et al. Photoluminescence characterization of Cd-annealing effects on high purity CdTe single crystals. In: J. Cryst. Growth, 2003, vol.252, no.1, p.102-106.

MATHEW, X., ARIZMENDI, J.R., CAMPOS, J. et al. Shallow levels in the band gap of CdTe films deposited on metallic substrates. In: Sol. Energy Mater. Sol. Cells., 2001, vol.70, p.379-393.


Refbacks

  • There are currently no refbacks.